Temperature-driven spin-zero effect in TaAs2

The electrical and thermo-electrical transport properties of the semimetal TaAs2 have been measured in a magnetic field applied along [?2 0 1] direction. resulting dependences resistivity as well Hall, Seebeck, Nernst coefficients below T ? 100 K can be satisfactorily described within two-band model consisting electron hole pockets. At low temperature, all exhibit significant contributions from quantum oscillations. fast Fourier-transform (FFT) oscillatory signal shows two fundamental frequencies, F? = 105 F? 221 T, second harmonic latter (F2? 442 T). ratio between FFT amplitudes F2? changes with temperature an unusual way, indicating observation spin-zero effect caused by change. This is likely related to substantial dependence Landé g-factor, which turn may stem non-parabolic energy dispersion or evolution spin-orbit coupling.